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CYStech Electronics Corp.
Low VCE(sat) PNP Epitaxial Planar Transistor
Spec. No. : C817N3 Issued Date : 2003.06.17 Revised Date:2004.07.01
Page:1/4
BTB1424LN3
Features
* Low VCE(sat), typically -0.3 V at IC / IB = -2A / -0.2A * Excellent current gain characteristics * Complementary to BTD2150LN3
Symbol
BTB1424LN3
Outline
SOT-23
BBase CCollector EEmitter
Absolute Maximum Ratings (Ta=25C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature
Note : Single Pulse Pw350s, Duty2%.
Symbol VCBO VCEO VEBO IC ICP Pd RJA Tj Tstg
Limit -40 -30 -5 -3 -7 (Note) 225 556 150 -55~+150
Unit V V V A A mW C/W C C
BTB1424LN3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Ta=25C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 fT Cob Min. -40 -30 -5 52 100 Typ. -0.3 -1 80 55 Max. -1 -1 -0.5 -2 500 Unit V V V A A V V MHz pF
Spec. No. : C817N3 Issued Date : 2003.06.17 Revised Date:2004.07.01
Page:2/4
Test Conditions IC=-50A, IE=0 IC=-1mA, IB=0 IE=-50A, IC=0 VCB=-30V, IE=0 VEB=-3V, IC=0 IC=-2A, IB=-0.2A IC=-2A, IB=-0.2A VCE=-2V, IC=-20mA VCE=-2V, IC=-1A VCE=-5V, IC=-0.1A, f=100MHz VCB=-10V, f=1MHz
*Pulse Test : Pulse Width 380s, Duty Cycle2%
Classification Of hFE2
Rank Range Q 100~200 P 160~320 E 250~500
BTB1424LN3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current gain vs Collector current
1000 10000
Spec. No. : C817N3 Issued Date : 2003.06.17 Revised Date:2004.07.01
Page:3/4
Saturation Voltage vs Collector current
Current gain---HFE
VCE=5V
100
VCE=2V
Saturation Voltage---(mV)
VCESAT
1000
100
IC=40IB
VCE=1V
10
IC=10IB IC=20IB
10 1 10 100 1000 10000
1 1 10 100 1000 10000
Collector current---IC(mA)
Collector current---IC(mA) Power Derating Curve
250 Power Dissipation---PD(mW)
Saturation Voltage vs Collector current
10000
VBE(SAT )@IC=10IB
Saturation Voltage---(mV)
200 150 100 50 0
1000
100 1 10 100 1000 10000 Collector current---IC(mA)
0
50
100
150
200
Ambient Temperature---TA()
BTB1424LN3
CYStek Product Specification
CYStech Electronics Corp.
SOT-23 Dimension
A L 3 B 1 2 S
Spec. No. : C817N3 Issued Date : 2003.06.17 Revised Date:2004.07.01
Page:4/4
Marking:
TE AE
V
G
3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Style: Pin 1.Base 2.Emitter 3.Collector
C D K
H
J
*: Typical
DIM A B C D G H
Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040
Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10
DIM J K L S V
Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256
Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
* Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTB1424LN3
CYStek Product Specification

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